Reaction layer dynamics in ion-assisted Si/XeF2 etching: Ion flux dependence

Ion-assisted Si/XeF2 etching: Temperature dependence in the range 100-1000 K

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Reactive ion etching

The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...

Dynamic annealing in ion implanted SiC: Flux versus temperature dependence

Deep Reactive Ion Etching (DRIE)

Ion dependence of the Bacillus subtilis RNase P reaction.

The properties of the Bacillus subtilis RNase P are characterized with regard to the types and concentrations of monovalent and divalent ions required to potentiate precursor tRNA cleavage by the protein-RNA holoenzyme and the catalytic RNA alone. The ionic dependence of the RNase P RNA-catalyzed reaction in part seems due to a requirement for ion shielding between substrate and catalytic RNAs....